IQE018N06NM6CGATMA1 vs ISC151N08NM6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE018N06NM6CGATMA1 disebabkan oleh Infineon dan ISC151N08NM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IQE018N06NM6CGATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 60V | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D, Tc) | 178 A | — |
| Continuous Drain Current (I_D, Ta) | 25 A | — |
| R_DS(on) max (V_GS=10 V) | 1.8 mΩ | — |
| Gate Threshold Voltage (V_GS(th)) | 3.3 V (logic-level compatible) | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 125 W | — |
| Kemasan | PG-TTFN-9-3 (TOLL/TTFN) | PG-TDSON-8 FL |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +175C (junction) | — |
| Technology | Trench MOSFET, OptiMOS 6 | OptiMOS 6 |
| RoHS Compliance | Compliant | — |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (TA=25°C) | — | 9.2 A |
| Arus Kumpal Tetap (TC=25°C) | — | 37 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 48 W |
| On-Resistance RDS(on) max | — | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Bilangan Pin | — | 8 |
| Channel Mode | — | Enhancement |
| Suhu Operasi | — | -55 °C to +175 °C |
| Status RoHS | — | Compliant |