IQE018N06NM6CGATMA1 vs ISC151N08NM6ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IQE018N06NM6CGATMA1 sa pamamagitan ng Infineon at ISC151N08NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IQE018N06NM6CGATMA1 - 60V 178A OptiMOS 6 N-MOSFET | Infineon
IQE018N06NM6CGATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IQE018N06NM6CGATMA1 | ISC151N08NM6ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 60V | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D, Tc) | 178 A | — |
| Continuous Drain Current (I_D, Ta) | 25 A | — |
| R_DS(on) max (V_GS=10 V) | 1.8 mΩ | — |
| Gate Threshold Voltage (V_GS(th)) | 3.3 V (logic-level compatible) | — |
| Power Dissipation (Ta) | 2.5 W | — |
| Power Dissipation (Tc) | 125 W | — |
| Packhaging | PG-TTFN-9-3 (TOLL/TTFN) | PG-TDSON-8 FL |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Hanay ng Temperature na Operasyon | -55C to +175C (junction) | — |
| Technology | Trench MOSFET, OptiMOS 6 | OptiMOS 6 |
| RoHS Compliance | Compliant | — |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (TA=25°C) | — | 9.2 A |
| Patuloy na Drain Current (TC=25°C) | — | 37 A |
| Power Dissipation (TA) | — | 3 W |
| Power Dissipation (TC) | — | 48 W |
| On-Resistance RDS(on) max | — | 15.1 mΩ |
| Gate Threshold Voltage VGS(th) typ | — | 3.5 V |
| Bilang ng Pins | — | 8 |
| Channel Mode | — | Enhancement |
| Temperature na Operasyon | — | -55 °C to +175 °C |
| Tindminan RoHS | — | Compliant |