IQE020N04LM6CGATMA1 vs IQE013N04LM6ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE020N04LM6CGATMA1 disebabkan oleh Infineon dan IQE013N04LM6ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQE013N04LM6ATMA1 - 40V 1.35mΩ OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQE020N04LM6CGATMA1 | IQE013N04LM6ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TA=25°C | 25 A | — |
| Continuous Drain Current (ID) at TC=25°C | 166 A | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Power Dissipation (PD) at TC=25°C | 107 W | — |
| On-State Resistance (RDS(on)) typical @ VGS=10V | 2.0 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge (Qg) typical | [DATA_NEEDED: Qg value] | — |
| Kemasan | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55°C to +150°C | -55 °C to +175 °C |
| Technology | OptiMOS 6, TrenchFET-class | OptiMOS N-channel trench MOSFET |
| Configuration | Single N-Channel, source-down | — |
| Status RoHS | Compliant | Compliant |
| Aras MSL | MSL1 (per JEDEC J-STD-020) | — |
| Polarity | — | N-Channel |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (Ta) | — | 31 A |
| Continuous Drain Current (Tc) | — | 205 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 107 W |
| On-Resistance RDS(on) max | — | [DATA_NEEDED: RDS(on) max value at VGS=10V] |
| On-Resistance RDS(on) typ | — | 1.35 mΩ @ VGS=10 V, ID=20 A |
| Gate Threshold Voltage (VGS(th)) | — | 2 V (typ) |
| Source-Down Topology | — | Yes (flip-chip die attach, drain on top thermal pad) |