IQE020N04LM6CGATMA1 vs IQE013N04LM6ATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IQE020N04LM6CGATMA1 tarafından Infineon ve IQE013N04LM6ATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IQE013N04LM6ATMA1 - 40V 1.35mΩ OptiMOS N-FET, PQFN 3.3x3.3 | Infineon
IQE013N04LM6ATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IQE020N04LM6CGATMA1 | IQE013N04LM6ATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 6 | — |
| Transistor Türü | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID) at TA=25°C | 25 A | — |
| Continuous Drain Current (ID) at TC=25°C | 166 A | — |
| Power Dissipation (PD) at TA=25°C | 2.5 W | — |
| Power Dissipation (PD) at TC=25°C | 107 W | — |
| On-State Resistance (RDS(on)) typical @ VGS=10V | 2.0 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) value] | — |
| Gate Charge (Qg) typical | [DATA_NEEDED: Qg value] | — |
| Paket | PG-TTFN-9-3 (PQFN 3.3x3.3, source-down center-gate) | PG-TSON-8-4 / PQFN 3.3x3.3 mm Source-Down |
| Montaj Türü | Surface Mount | Surface Mount |
| İşletim Sıcaklığı Aralığı | -55°C to +150°C | -55 °C to +175 °C |
| Technology | OptiMOS 6, TrenchFET-class | OptiMOS N-channel trench MOSFET |
| Configuration | Single N-Channel, source-down | — |
| RoHS Durumu | Compliant | Compliant |
| MSL Seviyesi | MSL1 (per JEDEC J-STD-020) | — |
| Polarity | — | N-Channel |
| Gate-Source Voltage (VGS) | — | ±20 V |
| Continuous Drain Current (Ta) | — | 31 A |
| Continuous Drain Current (Tc) | — | 205 A |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 107 W |
| On-Resistance RDS(on) max | — | [DATA_NEEDED: RDS(on) max value at VGS=10V] |
| On-Resistance RDS(on) typ | — | 1.35 mΩ @ VGS=10 V, ID=20 A |
| Gate Threshold Voltage (VGS(th)) | — | 2 V (typ) |
| Source-Down Topology | — | Yes (flip-chip die attach, drain on top thermal pad) |