IQE036N08NM6CGATMA1 vs IQE013N04LM6SCATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE036N08NM6CGATMA1 disebabkan oleh Infineon dan IQE013N04LM6SCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQE013N04LM6SCATMA1 - 40V 1.35mΩ OptiMOS Source-Down MOSFET | Infineon
IQE013N04LM6SCATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQE036N08NM6CGATMA1 | IQE013N04LM6SCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 80 V | — |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Continuous Drain Current (Id) at Tc | 118 A | — |
| Continuous Drain Current (Id) at Ta | 16.7 A | — |
| Rds(on) max at Vgs=10V | 3.6 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V (max) | — |
| Power Dissipation at Tc | 125 W | — |
| Power Dissipation at Ta | 2.5 W | — |
| Gambaran Suhu Operasi | -55 C to +175 C (junction, Tj) | [DATA_NEEDED: T_J min/max] |
| Kemasan | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) | PG-WHSON-8-1 (3.3 mm × 3.3 mm Source-Down PQFN) with exposed pad |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | MSL1 (per JEDEC J-STD-020) | — |
| Status RoHS | Compliant | Compliant |
| Technology | Trench MOSFET, OptiMOS 6 | OptiMOS (trench MOSFET) |
| Configuration | Single N-channel, Source-Down | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 40 V |
| Gate-Source Voltage (V<sub>GS</sub>) | — | ±20 V |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | — | 1.35 mΩ |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>A</sub>=25 °C | — | 31 A |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25 °C | — | [DATA_NEEDED: I_D at T_C] (per distributor listing 205 A pulsed) |
| Pulsed Drain Current (I<sub>DM</sub>) at T<sub>C</sub>=25 °C | — | 205 A |
| Power Dissipation (P<sub>D</sub>) at T<sub>A</sub>=25 °C | — | 2.5 W |
| Power Dissipation (P<sub>D</sub>) at T<sub>C</sub>=25 °C | — | 107 W |
| Total Gate Charge (Q<sub>G</sub>) @ V<sub>GS</sub>=10 V | — | 41 nC |
| Output Capacitance (C<sub>oss</sub>) @ V<sub>DS</sub>=20 V | — | 3800 pF |
| Packaging | — | Tape & Reel |
| Part Family | — | OptiMOS Source-Down, 40 V, 3.3×3.3 PQFN |