IQE036N08NM6CGATMA1 vs IQE013N04LM6SCATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IQE036N08NM6CGATMA1 tarafından Infineon ve IQE013N04LM6SCATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IQE013N04LM6SCATMA1 - 40V 1.35mΩ OptiMOS Source-Down MOSFET | Infineon
IQE013N04LM6SCATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IQE036N08NM6CGATMA1 | IQE013N04LM6SCATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 6 | — |
| Transistor Türü | N-Channel MOSFET | — |
| Drain-Source Voltage (Vds) | 80 V | — |
| Gate-Source Voltage (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Continuous Drain Current (Id) at Tc | 118 A | — |
| Continuous Drain Current (Id) at Ta | 16.7 A | — |
| Rds(on) max at Vgs=10V | 3.6 mOhm | — |
| Gate Threshold Voltage (Vgs(th)) | 3.5 V (max) | — |
| Power Dissipation at Tc | 125 W | — |
| Power Dissipation at Ta | 2.5 W | — |
| İşletim Sıcaklığı Aralığı | -55 C to +175 C (junction, Tj) | [DATA_NEEDED: T_J min/max] |
| Paket | PG-TTFN-9-3 (Source-Down PQFN, 3.3 x 3.3 mm) | PG-WHSON-8-1 (3.3 mm × 3.3 mm Source-Down PQFN) with exposed pad |
| Montaj Türü | Surface Mount | Surface Mount |
| MSL Seviyesi | MSL1 (per JEDEC J-STD-020) | — |
| RoHS Durumu | Compliant | Compliant |
| Technology | Trench MOSFET, OptiMOS 6 | OptiMOS (trench MOSFET) |
| Configuration | Single N-channel, Source-Down | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 40 V |
| Gate-Source Voltage (V<sub>GS</sub>) | — | ±20 V |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | — | 1.35 mΩ |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>A</sub>=25 °C | — | 31 A |
| Continuous Drain Current (I<sub>D</sub>) at T<sub>C</sub>=25 °C | — | [DATA_NEEDED: I_D at T_C] (per distributor listing 205 A pulsed) |
| Pulsed Drain Current (I<sub>DM</sub>) at T<sub>C</sub>=25 °C | — | 205 A |
| Power Dissipation (P<sub>D</sub>) at T<sub>A</sub>=25 °C | — | 2.5 W |
| Power Dissipation (P<sub>D</sub>) at T<sub>C</sub>=25 °C | — | 107 W |
| Total Gate Charge (Q<sub>G</sub>) @ V<sub>GS</sub>=10 V | — | 41 nC |
| Output Capacitance (C<sub>oss</sub>) @ V<sub>DS</sub>=20 V | — | 3800 pF |
| Packaging | — | Tape & Reel |
| Part Family | — | OptiMOS Source-Down, 40 V, 3.3×3.3 PQFN |