IQE050N08NM5CGATMA1 vs IQE008N03LM5CGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE050N08NM5CGATMA1 disebabkan oleh Infineon dan IQE008N03LM5CGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IQE050N08NM5CGATMA1 IQE008N03LM5CGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (VDS) 80 V 30 V
Continuous Drain Current (Ta) 16 A —
Continuous Drain Current (Tc) 101 A —
On-Resistance RDS(on) Max 5.0 mΩ —
Power Dissipation (Ta) 2.5 W —
Power Dissipation (Tc) 100 W —
Kemasan PG-TTFN-9-1 (Surface Mount) PG-TTFN-9-1 (8-PowerTDFN) with wettable flanks
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS 5 (Source-Down) —
Gate Threshold Vgs(th) Typ [DATA_NEEDED: Vgs(th) typical value] —
Suhu Operasi -55°C to +175°C (TJ max) —
Total Gate Charge Qg Typ [DATA_NEEDED: total gate charge Qg typical] —
Status RoHS Compliant —
Aras MSL [DATA_NEEDED: MSL rating] —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 5
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at Ta=25C — 27 A
Continuous Drain Current (ID) at Tc=25C — 253 A
On-Resistance (RDS(on)) at VGS=10V — 0.85 mOhm (typ) @ 20 A
Gate-Source Voltage (VGS) Max — +/-16 V
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical and min/max]
Total Gate Charge (Qg) at VGS=10V — 64 nC (typ)
Input Capacitance (Ciss) at VDS=15V — 5700 pF (typ)
Output Capacitance (Coss) — [DATA_NEEDED: Coss typical]
Reverse Transfer Capacitance (Crss) — [DATA_NEEDED: Crss typical]
Power Dissipation (PD) at Ta=25C — 2.1 W
Power Dissipation (PD) at Tc=25C — 89 W
Gambaran Suhu Operasi — -55C to +150C (junction)
Lead-Free / RoHS — Yes (compliant per Infineon product page)
AEC-Q100 Automotive — [DATA_NEEDED: AEC-Q100 qualification status]

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