IQE065N10NM5CGSCATMA1 vs IQE050N08NM5CGSCATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQE065N10NM5CGSCATMA1 disebabkan oleh Infineon dan IQE050N08NM5CGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQE050N08NM5CGSCATMA1 - 80V 99A OptiMOS 5 N-Channel MOSFET | Infineon
IQE050N08NM5CGSCATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQE065N10NM5CGSCATMA1 | IQE050N08NM5CGSCATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 5 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25 C | 85 A | — |
| Continuous Drain Current (ID) at TA | 13 A | 16 A |
| On-Resistance (RDS(on)) max at VGS=10V | 6.5 mOhm | — |
| Power Dissipation at TA | 2.5 W | — |
| Power Dissipation at TC | 100 W | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Kemasan | PG-WHTFN-9-1 (Source-Down) | PG-WHTFN-9-1 (Source-Down) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | OptiMOS 5 trench-gate | OptiMOS 5 (trench) |
| Gambaran Suhu Operasi | -55 C to +150 C | -55C to +175C (junction, typical) |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at TC | — | 99 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max at VGS=10V | — | 5.0 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | 3.8 V |
| Gate Charge Qg typ | — | [DATA_NEEDED: total gate charge] |
| Total Power Dissipation at TC (PD) | — | 100 W |
| Total Power Dissipation at TA (PD) | — | 2.5 W |
| Lead-Free / RoHS | — | Lead-free, RoHS compliant |
| Aras MSL | — | 1 |