IQEH50NE2LM7UCGSCATMA1 vs IQE050N08NM5CGSCATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQEH50NE2LM7UCGSCATMA1 disebabkan oleh Infineon dan IQE050N08NM5CGSCATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IQEH50NE2LM7UCGSCATMA1 IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon

IQEH50NE2LM7UCGSCATMA1 - 25V OptiMOS 7 N-Ch MOSFET | Infineon

IQEH50NE2LM7UCGSCATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQEH50NE2LM7UCGSCATMA1 IQE050N08NM5CGSCATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 Power-Transistor —
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) Max 25 V —
Continuous Drain Current (ID) at TA 54 A 16 A
Continuous Drain Current (ID) at TC 422 A 99 A
RDS(on) Max 0.5 mΩ —
Gate Threshold Voltage (VGS(th)) typ 2 V —
Power Dissipation (PD) at TA 2.5 W —
Power Dissipation (PD) at TC 150 W —
Maximum Junction Temperature 175 °C —
Kemasan PG-WHTFN-9-1 (surface mount) PG-WHTFN-9-1 (Source-Down)
Jenis Pemasangan Surface Mount Surface Mount
Series OptiMOS 7 —
Technology Silicon N-Channel Power MOSFET OptiMOS 5 (trench)
FET Type — N-Channel
Drain-Source Voltage (VDS) — 80 V
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
On-Resistance RDS(on) max at VGS=10V — 5.0 mOhm
Gate Threshold Voltage VGS(th) typ — 3.8 V
Gate Charge Qg typ — [DATA_NEEDED: total gate charge]
Total Power Dissipation at TC (PD) — 100 W
Total Power Dissipation at TA (PD) — 2.5 W
Gambaran Suhu Operasi — -55C to +175C (junction, typical)
Lead-Free / RoHS — Lead-free, RoHS compliant
Aras MSL — 1

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