IQEH54NE2LM7UCGATMA1 vs IAUCN04S7N015GATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQEH54NE2LM7UCGATMA1 disebabkan oleh Infineon dan IAUCN04S7N015GATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IAUCN04S7N015GATMA1 IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 - 40V 165A OptiMOS 7 N-FET | Infineon

IAUCN04S7N015GATMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IQEH54NE2LM7UCGATMA1 IAUCN04S7N015GATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Product Family OptiMOS 7 Power-Transistor OptiMOS 7
Channel Type N-Channel N-Channel
Drain-Source Voltage (VDS) 25 V —
Continuous Drain Current (ID) at Ta 52 A —
Continuous Drain Current (ID) at Tc 406 A —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 150 W —
Kemasan PG-TTFN-9-3 PG-THSOG-4-1 (SSO4G 5x6) surface mount
Jenis Pemasangan Surface Mount Surface Mount (IMS-compatible source-down)
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
On-Resistance (RDS(on)) at 10V VGS [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical in nC] —
Gambaran Suhu Operasi -55C to +150C (typical MOSFET range) —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] 1 (per JEDEC J-STD-020)
Drain-Source Voltage (V_DS) — 40 V
Continuous Drain Current (I_D) — 165 A (Tc)
Power Dissipation (P_D) — 96 W (Tc)
R_DS(on) max — 1.53 mΩ at V_GS=10 V
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS max]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical]
Suhu Hubungan Operasi — -55C to +175C
Automotive Qualification — AEC-Q101 qualified
Total Gate Charge (Q_G) — [DATA_NEEDED: total gate charge]

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