IQEH54NE2LM7UCGATMA1 vs IQE050N08NM5CGATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQEH54NE2LM7UCGATMA1 disebabkan oleh Infineon dan IQE050N08NM5CGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IQEH54NE2LM7UCGATMA1 IQE050N08NM5CGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Product Family OptiMOS 7 Power-Transistor —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 25 V 80 V
Continuous Drain Current (ID) at Ta 52 A —
Continuous Drain Current (ID) at Tc 406 A —
Power Dissipation at Ta 2.5 W —
Power Dissipation at Tc 150 W —
Kemasan PG-TTFN-9-3 PG-TTFN-9-1 (Surface Mount)
Jenis Pemasangan Surface Mount Surface Mount
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
On-Resistance (RDS(on)) at 10V VGS [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] —
Total Gate Charge (Qg) [DATA_NEEDED: Qg typical in nC] —
Gambaran Suhu Operasi -55C to +150C (typical MOSFET range) —
Status RoHS Compliant Compliant
Aras MSL [DATA_NEEDED: MSL rating] [DATA_NEEDED: MSL rating]
FET Type — N-Channel
Continuous Drain Current (Ta) — 16 A
Continuous Drain Current (Tc) — 101 A
On-Resistance RDS(on) Max — 5.0 mΩ
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 100 W
Technology — OptiMOS 5 (Source-Down)
Gate Threshold Vgs(th) Typ — [DATA_NEEDED: Vgs(th) typical value]
Suhu Operasi — -55°C to +175°C (TJ max)
Total Gate Charge Qg Typ — [DATA_NEEDED: total gate charge Qg typical]

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