IQEH54NE2LM7UCGATMA1 vs IQE050N08NM5CGATMA1 مقایسه
مقایسه دقیق کنار به کنار IQEH54NE2LM7UCGATMA1 توسط Infineon و IQE050N08NM5CGATMA1 توسط Infineon. مشخصات کلیدی، پارامترهای الکتریکی، بسته‌بندی، وضعیت چرخه عمر، قیمت‌گذاری و موجودی را مقایسه کنید تا بهترین قطعه را برای نیازهای طراحی خود تعیین کنید.
Infineon
IQEH54NE2LM7UCGATMA1 - 25V OptiMOS 7 N-Channel MOSFET | Infineon
IQEH54NE2LM7UCGATMA1 ✓ فعالInfineon
IQE050N08NM5CGATMA1 - 80V N-Ch MOSFET 5mΩ Source-Down | Infineon
IQE050N08NM5CGATMA1 ✓ فعالمقایسه مشخصات
| پارامتر | IQEH54NE2LM7UCGATMA1 | IQE050N08NM5CGATMA1 |
|---|---|---|
| برند | Infineon | Infineon |
| دسته‌بندی | MOSFETs | MOSFETs |
| وضعیت چرخه عمر | فعال | فعال |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 Power-Transistor | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | 80 V |
| Continuous Drain Current (ID) at Ta | 52 A | — |
| Continuous Drain Current (ID) at Tc | 406 A | — |
| Power Dissipation at Ta | 2.5 W | — |
| Power Dissipation at Tc | 150 W | — |
| بسته‌بندی | PG-TTFN-9-3 | PG-TTFN-9-1 (Surface Mount) |
| نوع نصب | Surface Mount | Surface Mount |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| On-Resistance (RDS(on)) at 10V VGS | [DATA_NEEDED: RDS(on) max in mohm at VGS=10V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical in nC] | — |
| محدوده دمای کاری | -55C to +150C (typical MOSFET range) | — |
| وضعیت RoHS | Compliant | Compliant |
| سطح MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| FET Type | — | N-Channel |
| Continuous Drain Current (Ta) | — | 16 A |
| Continuous Drain Current (Tc) | — | 101 A |
| On-Resistance RDS(on) Max | — | 5.0 mΩ |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 100 W |
| Technology | — | OptiMOS 5 (Source-Down) |
| Gate Threshold Vgs(th) Typ | — | [DATA_NEEDED: Vgs(th) typical value] |
| دمای کاری | — | -55°C to +175°C (TJ max) |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: total gate charge Qg typical] |