IQEH68NE2LM7UCGATMA1 vs IQEH50NE2LM7ZCGATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IQEH68NE2LM7UCGATMA1 disebabkan oleh Infineon dan IQEH50NE2LM7ZCGATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Infineon
IQEH68NE2LM7UCGATMA1 - 25V OptiMOS 7 N-MOSFET, 338A | Infineon
IQEH68NE2LM7UCGATMA1 ✓ AktifInfineon
IQEH50NE2LM7ZCGATMA1 - 25V 422A OptiMOS 7 N-Channel MOSFET | Infineon
IQEH50NE2LM7ZCGATMA1 ✓ AktifPengandingan Spesifikasi
| Parametr | IQEH68NE2LM7UCGATMA1 | IQEH50NE2LM7ZCGATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 7 | — |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) @ Ta | 47 A | — |
| Pulsed Drain Current (IDM) @ Tc | 338 A | — |
| Power Dissipation (PD) @ Ta | 2.5 W | — |
| Power Dissipation (PD) @ Tc | 130 W | — |
| Gate Threshold Voltage Type | Logic-level (per OptiMOS 7 family) | — |
| On-Resistance Family | RDS(on)10 / RDS(on)45 (10V and 4.5V rated) | — |
| Maximum Junction Temperature | 175 °C | +175 degrees C |
| Gambaran Suhu Operasi | -55 °C to +175 °C (typical for OptiMOS 7) | -55 degrees C to +175 degrees C |
| Kemasan | PG-TTFN-9-3 (surface mount) | PG-TTFN-9-3 |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | [DATA_NEEDED: MSL Level] | — |
| Status RoHS | Compliant (per distributor listing) | Compliant |
| Technology | OptiMOS 7 trench MOSFET | OptiMOS 7 (Trench-Gate) |
| Packaging | Tape & Reel (per ATMA1 suffix) | — |
| Product Family | — | OptiMOS 7 Power-Transistor |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (Vds) Max | — | 25 V |
| Continuous Drain Current (Ta) | — | 54 A |
| Continuous Drain Current (Tc) | — | 422 A |
| Maximum On-Resistance (Rds(on)) | — | 0.5 mOhm |
| Gate Threshold Voltage (Vgs(th)) | — | 1.7 V |
| Power Dissipation (Ta) | — | 2.5 W |
| Power Dissipation (Tc) | — | 150 W |
| Qualification | — | Industrial grade per Infineon datasheet |