IQFH55N04NM6ATMA1 vs ISC045N03L5SATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IQFH55N04NM6ATMA1 disebabkan oleh Infineon dan ISC045N03L5SATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IQFH55N04NM6ATMA1 ISC045N03L5SATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 6 —
Jenis Transistor N-Channel MOSFET N-Channel MOSFET
Drain-Source Voltage (V_DS) 40 V —
Continuous Drain Current (I_D) @ TA=25°C 53 A —
Pulsed Drain Current @ TC=25°C 451 A —
Static R_DS(on) (typ) 0.55 mΩ —
Power Dissipation (TA) 3 W —
Power Dissipation (TC) 214 W —
Kemasan PG-TSON-12-1 (PQFN 8x6 mm², clip-based) SuperSO8 5x6 (PG-TDSON-8-6)
Jenis Pemasangan Surface Mount Surface Mount
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical] —
Gate Charge (Q_G) [DATA_NEEDED: total gate charge] —
Suhu Hubungan Operasi -55°C to +175°C —
Technology Trench MOSFET (OptiMOS 6 generation) OptiMOS 5 / Trench
Status RoHS Compliant Compliant
AEC-Q100 [DATA_NEEDED: automotive qualification status] —
Part Number — ISC045N03L5SATMA1
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (ID) at TA=25°C — 18 A
Continuous Drain Current (ID) at TC=25°C — 63 A
On-Resistance RDS(on) max @ VGS=10V — 4.5 mΩ
Gate-Source Threshold Voltage (VGS(th)) — 2 V @ ID=250 µA
Gate-Source Voltage (VGS) max — ±20 V
Total Gate Charge (Qg) — 13 nC @ VGS=10 V
Input Capacitance (Ciss) — 870 pF @ VDS=15 V
Power Dissipation (PD) at TA=25°C — 2.5 W
Power Dissipation (PD) at TC=25°C — 30 W
Gambaran Suhu Operasi — -55 °C to +150 °C

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