IRF1010NPBF-VB vs IRF1010EPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF1010NPBF-VB disebabkan oleh VBsemi Elec dan IRF1010EPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF1010NPBF-VB | IRF1010EPBF |
|---|---|---|
| Merek | VBsemi Elec | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Transistor Polarity | N-Channel | — |
| Drain-Source Voltage VDSS | 55 V | — |
| Continuous Drain Current ID | 85 A (Tc) | — |
| Power Dissipation PD | 180 W (Tc) | — |
| On-Resistance RDS(on) | 0.014 Ohm (14 mOhm) | — |
| Total Gate Charge Qg | 80 nC | — |
| Gate-Source Voltage VGSS | +/-20 V | — |
| Operating Mode | Enhancement | — |
| Number of Channels | 1 | — |
| Kemasan | TO-220AB (Through Hole) | TO-220AB |
| Jenis Pemasangan | Through Hole | Through Hole |
| Configuration | Single FET | Single FET |
| Process Technology | Planar HEXFET, Advanced Process Technology | — |
| Recommended Switching Frequency | Below 100 kHz | — |
| Market Qualification | Industrial | — |
| Status RoHS | Compliant (Pb-free suffix) | RoHS3 Compliant |
| Polarity | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) | — | 84 A at Tc |
| Power Dissipation (PD) | — | 200 W at Tc |
| On-Resistance (RDS(on)) | — | 12 mOhm |
| Total Gate Charge (Qg) | — | 86.6 nC |
| Technology | — | HEXFET Power MOSFET |
| Aras MSL | — | 3 (168 Hours) |
| Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Rise Time / Fall Time | — | [DATA_NEEDED: switching times] |
| Thermal Resistance (RthJC) | — | [DATA_NEEDED: thermal resistance junction to case] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: input capacitance] |