IRF1310NPBF vs IRF640NPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF1310NPBF disebabkan oleh Infineon dan IRF640NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF1310NPBF | IRF640NPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at TC=25C | 42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM value] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V | 36 mOhm | — |
| Total Gate Charge (Qg) | 73.3 nC | 44.7 nC |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs value] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd value] | — |
| Power Dissipation (PD) at TC=25C | 160 W | — |
| Maximum Junction Temperature | 175 C | — |
| Gambaran Suhu Operasi | -55 C to +175 C | — |
| Kemasan | TO-220AB (through-hole) | TO-220AB (through-hole, 3-pin) |
| Jenis Pemasangan | Through Hole | Through Hole |
| Technology | HEXFET | HEXFET (5th Generation) |
| Status RoHS | Compliant (PBF suffix) | Compliant |
| Drain-to-Source Voltage (VDS) | — | 200 V |
| Continuous Drain Current (ID) at Tc | — | 18 A |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Static Drain-to-Source On-Resistance (RDS(on)) | — | 150 mOhm max at VGS = 10 V |
| Power Dissipation (PD) at Tc=25C | — | 150 W |
| Suhu Hubungan Operasi | — | -55C to +150C |
| Jenis Transistor | — | N-Channel Enhancement Mode |
| Avalanche Energy Rated | — | Yes |
| dv/dt Rating | — | Dynamic, rated |
| Lead-Free | — | Yes (PBF suffix) |
| Manufacturer | — | Infineon (formerly International Rectifier) |