IRF3205STRLPBF vs IRFB3207ZPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF3205STRLPBF disebabkan oleh Infineon dan IRFB3207ZPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF3205STRLPBF IRFB3207ZPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (Vdss) 55 V —
Continuous Drain Current (Id) @ Tc=25°C 110 A —
Pulsed Drain Current (Idm) 390 A —
Static Drain-Source On-Resistance (Rds(on)) 8 mΩ max @ Vgs=10V —
Gate-Source Threshold Voltage (Vgs(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 97.3 nC typical —
Power Dissipation (Pd) @ Tc=25°C 200 W —
Gambaran Suhu Operasi -55 °C to +175 °C (Tj) —
Kemasan TO-263-3 (D2PAK) TO-220AB (3-lead through-hole)
Jenis Pemasangan Surface Mount Through Hole
Lead-Free / RoHS Status Lead-Free / RoHS Compliant (PBF suffix) —
Technology HEXFET (advanced process) N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Packaging Tape & Reel (STRL) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRFB3207ZPBF
Series — HEXFET
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
Suhu Hubungan Operasi — -55 C to +175 C
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
Aras MSL — N/A (through-hole)
Avalanche Rated — Yes (improved Z-variant ruggedness)

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