IRF3205STRLPBF vs IRFB3207ZPBF Karşılaştırma

Ayrıntılı yan yana karşılaştırma IRF3205STRLPBF tarafından Infineon ve IRFB3207ZPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.

Özellik Karşılaştırması

Parametre IRF3205STRLPBF IRFB3207ZPBF
Marka Infineon Infineon
Kategori MOSFETs MOSFETs
Yaşam Döngüsü Durumu Aktif Aktif
Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (Vdss) 55 V —
Continuous Drain Current (Id) @ Tc=25°C 110 A —
Pulsed Drain Current (Idm) 390 A —
Static Drain-Source On-Resistance (Rds(on)) 8 mΩ max @ Vgs=10V —
Gate-Source Threshold Voltage (Vgs(th)) 2.0 V to 4.0 V —
Total Gate Charge (Qg) 97.3 nC typical —
Power Dissipation (Pd) @ Tc=25°C 200 W —
İşletim Sıcaklığı Aralığı -55 °C to +175 °C (Tj) —
Paket TO-263-3 (D2PAK) TO-220AB (3-lead through-hole)
Montaj Türü Surface Mount Through Hole
Lead-Free / RoHS Status Lead-Free / RoHS Compliant (PBF suffix) —
Technology HEXFET (advanced process) N-Channel MOSFET (HEXFET, Z-suffix ruggedized)
Packaging Tape & Reel (STRL) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRFB3207ZPBF
Series — HEXFET
Drain-Source Voltage (VDS) — 75 V
Continuous Drain Current (ID) at TC=25C — 120 A
Silicon-Limited Drain Current — 170 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current value]
On-Resistance RDS(on) typ @ VGS=10V — 3.3 mOhm
On-Resistance RDS(on) max @ VGS=10V — 4.1 mOhm
Gate Threshold Voltage VGS(th) — [DATA_NEEDED: typical VGS(th)]
Total Gate Charge Qg — [DATA_NEEDED: total gate charge]
Power Dissition (PD) at TC=25C — 300 W
İşletim Jant Sıcaklığı — -55 C to +175 C
Lead-Free / RoHS — Yes (PBF suffix = lead-free)
MSL Seviyesi — N/A (through-hole)
Avalanche Rated — Yes (improved Z-variant ruggedness)

Dökümanlar & Kaynaklar

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