IRF3205STRLPBF vs IRFB3207ZPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRF3205STRLPBF sa pamamagitan ng Infineon at IRFB3207ZPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRF3205STRLPBF | IRFB3207ZPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | N-Channel | — |
| MOSFET Operating Mode | Enhancement | — |
| Drain-Source Voltage (Vdss) | 55 V | — |
| Continuous Drain Current (Id) @ Tc=25°C | 110 A | — |
| Pulsed Drain Current (Idm) | 390 A | — |
| Static Drain-Source On-Resistance (Rds(on)) | 8 mΩ max @ Vgs=10V | — |
| Gate-Source Threshold Voltage (Vgs(th)) | 2.0 V to 4.0 V | — |
| Total Gate Charge (Qg) | 97.3 nC typical | — |
| Power Dissipation (Pd) @ Tc=25°C | 200 W | — |
| Hanay ng Temperature na Operasyon | -55 °C to +175 °C (Tj) | — |
| Packhaging | TO-263-3 (D2PAK) | TO-220AB (3-lead through-hole) |
| Uri ng Pagpapasok | Surface Mount | Through Hole |
| Lead-Free / RoHS Status | Lead-Free / RoHS Compliant (PBF suffix) | — |
| Technology | HEXFET (advanced process) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Packaging | Tape & Reel (STRL) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Level ng MSL | — | N/A (through-hole) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |