IRF4905SPBF vs IRF4905STRRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF4905SPBF disebabkan oleh Infineon dan IRF4905STRRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRF4905SPBF | IRF4905STRRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -55 V | -55 V |
| Continuous Drain Current (ID, Tc=25C) | -42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on) max) | 20 mOhm @ VGS = -10V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max, typical +/-20V] | ±20 V |
| Gate Threshold Voltage (VGS(th)) | -2.0 V to -4.0 V | -2.0 V to -4.0 V |
| Power Dissipation (PD, Tc=25C) | 170 W | — |
| Suhu Hubungan Operasi | -55 C to +150 C | -55 C to +175 C |
| Thermal Resistance, Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC, typical 0.6 C/W] | — |
| Kemasan | D2PAK (TO-263) surface mount | D2PAK (TO-263-3) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | HEXFET, planar cell | HEXFET (Advanced Process) |
| Total Gate Charge (Qg) | 120 nC (typical per Mouser listing) | 120 nC |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Status RoHS | Compliant (PBF suffix indicates Pb-free) | Compliant |
| Qualification | JEDEC standard | — |
| Continuous Drain Current (ID) at TC=25C | — | -74 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| RDS(on) max at VGS=-10V | — | 20 mOhm |
| RDS(on) max at VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Power Dissipation (PD) at TC=25C | — | 170 W |
| Lead-Free | — | Yes |