IRF4905SPBF vs IRF4905STRRPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRF4905SPBF tarafından Infineon ve IRF4905STRRPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRF4905SPBF | IRF4905STRRPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -55 V | -55 V |
| Continuous Drain Current (ID, Tc=25C) | -42 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance (RDS(on) max) | 20 mOhm @ VGS = -10V | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max, typical +/-20V] | ±20 V |
| Gate Threshold Voltage (VGS(th)) | -2.0 V to -4.0 V | -2.0 V to -4.0 V |
| Power Dissipation (PD, Tc=25C) | 170 W | — |
| İşletim Jant Sıcaklığı | -55 C to +150 C | -55 C to +175 C |
| Thermal Resistance, Junction-to-Case (RthJC) | [DATA_NEEDED: RthJC, typical 0.6 C/W] | — |
| Paket | D2PAK (TO-263) surface mount | D2PAK (TO-263-3) |
| Montaj Türü | Surface Mount | Surface Mount |
| Technology | HEXFET, planar cell | HEXFET (Advanced Process) |
| Total Gate Charge (Qg) | 120 nC (typical per Mouser listing) | 120 nC |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| RoHS Durumu | Compliant (PBF suffix indicates Pb-free) | Compliant |
| Qualification | JEDEC standard | — |
| Continuous Drain Current (ID) at TC=25C | — | -74 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| RDS(on) max at VGS=-10V | — | 20 mOhm |
| RDS(on) max at VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Power Dissipation (PD) at TC=25C | — | 170 W |
| Lead-Free | — | Yes |