IRF7313TRPBF vs IRF7309TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7313TRPBF disebabkan oleh Infineon dan IRF7309TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7313TRPBF IRF7309TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon (formerly International Rectifier) —
Part Number IRF7313TRPBF —
Technology IR MOSFET Generation V (HEXFET Fifth Generation) IR HEXFET Generation V
Transistor Configuration Dual N-Channel (Independent) —
Drain-Source Voltage (VDS) max 30 V —
Continuous Drain Current (ID) max 6.5 A per channel —
On-Resistance (RDS(on)) max 29 mOhm at VGS=10V —
Power Dissipation (PD) max 2 W —
Gate-Source Voltage (VGS) max [DATA_NEEDED: ±V rating] —
Gate Threshold Voltage (VGS(th)) 1.0 V to 2.5 V (typical range) [DATA_NEEDED: typical VGS(th) value]
Gambaran Suhu Operasi -55C to +150C (junction) -55C to +150C (TJ)
Kemasan 8-pin SOIC (SO-8) surface mount 8-SO (SOIC-8)
Jenis Pemasangan Surface Mount Surface Mount
Lead-Free / Pbf Yes (lead-free plating) —
Avalanche Rated Yes —
Aras MSL 1 MSL-1 (unlimited floor life per JEDEC J-STD-020)
Qualification Standard Consumer market (per IR datasheet) —
Shipping Media Tape & Reel (TRPBF suffix) —
Configuration — Dual N-Channel + P-Channel (Complementary)
Polarity — N+P
Drain-Source Voltage (VDS) — 30 V
Continuous Drain Current (N-channel, TA=25C) — 4 A
Continuous Drain Current (P-channel, TA=25C) — 3 A
On-Resistance (N-channel, max) — 50 mOhm
On-Resistance (P-channel, max) — [DATA_NEEDED: RDS(on) P-channel value]
Power Dissipation (TA=25C) — 1.4 W
Lead-Free Status — Yes (TRPBF suffix = Pb-free)
Status RoHS — Compliant
Packaging — Tape & Reel

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