IRF7319TRPBF vs IRF7389TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7319TRPBF disebabkan oleh Infineon dan IRF7389TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7319TRPBF IRF7389TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon (formerly International Rectifier)
Product Type Dual MOSFET Array (N-channel + P-channel) —
Technology IR MOSFET / Fifth Generation HEXFET HEXFET Generation V (IR MOSFET)
Drain-to-Source Voltage (VDS) 30 V —
Continuous Drain Current N-channel (ID) 6.5 A —
Continuous Drain Current P-channel (ID) 4.9 A —
RDS(on) Max N-channel 29 mOhm (per Infineon product page) —
RDS(on) Max P-channel [DATA_NEEDED: P-channel RDS(on) max] —
Total Power Dissipation (PD) 2 W —
Thermal Resistance Junction-to-Ambient N-ch 120 C/W (steady state) —
Thermal Resistance Junction-to-Ambient P-ch 110 C/W (steady state) —
Package Type 8-SOIC (SO-8) —
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typ/min/max] —
Lead-Free / RoHS Yes (PBF suffix = Pb-free) —
Packaging Tape & Reel (TR suffix) —
Configuration N-Channel + P-Channel (complementary half-bridge) Dual N+P Complementary Half-Bridge
Transistor Polarity — N and P Channel
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (N-Ch, Id) — 7.3 A
Continuous Drain Current (P-Ch, Id) — -5.3 A
On-Resistance RDS(on) Max — 29 mOhm
Power Dissipation (Pd) — 2.5 W
Kemasan — 8-SO (SOIC-8)
Suhu Operasi — -55C to +150C
Avalanche Rated — Yes
Lead Free / RoHS — Lead Free / RoHS Compliant
Aras MSL — 1

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