IRF7342TRPBF vs IRF7343TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7342TRPBF disebabkan oleh Infineon dan IRF7343TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7342TRPBF IRF7343TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Part Number IRF7342TRPBF —
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Technology HEXFET Power MOSFET (Fifth Generation), P-Channel IR MOSFET (HEXFET Generation V)
Configuration Dual P-Channel MOSFET Array (two independent P-FETs in one package) —
Drain-Source Voltage (Vds) -55 V —
Continuous Drain Current (Id) -3.4 A at 25 C —
Pulsed Drain Current (Idm) [DATA_NEEDED: pulsed drain current] —
Gate Threshold Voltage (Vgs(th)) -1.0 V to -3.0 V (typ -1.7 V) —
Drain-Source On-Resistance (RDS(on)) 0.105 ohm max at VGS = -10 V —
Maximum Power Dissumption (Pd) 2 W —
Gambaran Suhu Operasi -55 C to +150 C (Tj) —
Kemasan 8-SOIC (SO-8), surface mount 8-SOIC (SO-8)
Jenis Pemasangan Surface Mount Surface Mount
Packaging Tape and Reel (TR) —
Lead-Free / RoHS Yes (PBF suffix indicates lead-free, RoHS compliant) —
Channel Type P-Channel (enhancement mode) —
Number of Channels 2 (dual array) —
Part Status — Active
Jenis Transistor — N and P-Channel Complementary MOSFET Array
Drain-to-Source Voltage (VDS) - N-Channel — 55 V
Drain-to-Source Voltage (VDS) - P-Channel — 55 V
Continuous Drain Current (ID) - N-Channel — 4.7 A
Continuous Drain Current (ID) - P-Channel — 3.4 A
On-Resistance (RDS(on)) - N-Channel — 0.043 ohm (typical per chipdig.com)
On-Resistance (RDS(on)) max — 50 mOhm
Power Dissipation (PD) — 2 W
Lead-Free — Yes
RoHS Compliance — Compliant

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