IRF7343TRPBF vs IRF7313TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7343TRPBF disebabkan oleh Infineon dan IRF7313TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7343TRPBF IRF7313TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon (formerly International Rectifier)
Part Status Active —
Jenis Transistor N and P-Channel Complementary MOSFET Array —
Technology IR MOSFET (HEXFET Generation V) IR MOSFET Generation V (HEXFET Fifth Generation)
Drain-to-Source Voltage (VDS) - N-Channel 55 V —
Drain-to-Source Voltage (VDS) - P-Channel 55 V —
Continuous Drain Current (ID) - N-Channel 4.7 A —
Continuous Drain Current (ID) - P-Channel 3.4 A —
On-Resistance (RDS(on)) - N-Channel 0.043 ohm (typical per chipdig.com) —
On-Resistance (RDS(on)) max 50 mOhm 29 mOhm at VGS=10V
Power Dissipation (PD) 2 W —
Kemasan 8-SOIC (SO-8) 8-pin SOIC (SO-8) surface mount
Jenis Pemasangan Surface Mount Surface Mount
Lead-Free Yes —
RoHS Compliance Compliant —
Part Number — IRF7313TRPBF
Transistor Configuration — Dual N-Channel (Independent)
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) max — 6.5 A per channel
Power Dissipation (PD) max — 2 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: ±V rating]
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.5 V (typical range)
Gambaran Suhu Operasi — -55C to +150C (junction)
Lead-Free / Pbf — Yes (lead-free plating)
Avalanche Rated — Yes
Aras MSL — 1
Qualification Standard — Consumer market (per IR datasheet)
Shipping Media — Tape & Reel (TRPBF suffix)

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