IRF7351TRPBF vs IRF7105PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF7351TRPBF disebabkan oleh Infineon dan IRF7105PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF7351TRPBF IRF7105PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies (formerly International Rectifier)
Part Number IRF7351TRPBF IRF7105PBF
Configuration Dual N-Channel MOSFET (Half-Bridge) —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) 8 A —
On-Resistance RDS(on) max 17.8 mOhm —
On-Resistance RDS(on) typ (per digchips) 0.0137 ohm (13.7 mOhm) —
Total Gate Charge (Qg) 24 nC —
Power Dissipation (PD) 2 W —
Technology IR MOSFET (HEXFET trench) HEXFET (Fifth Generation)
Kemasan 8-SO (SO-8 / SOIC-8) Surface Mount —
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55C to +150C (junction) —
Typical Application Synchronous Rectifier for Isolated DC-DC Converters —
Status RoHS Compliant (PBF suffix = lead-free) —
Lead-Free Yes —
Aras MSL [DATA_NEEDED: MSL Level] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min] —
FET Type — N-Channel and P-Channel (Dual, Complementary)
N-Channel VDS (Drain-Source Voltage) — 25 V
P-Channel VDS (Drain-Source Voltage) — 25 V
N-Channel Continuous Drain Current (ID) — 3.5 A
P-Channel Continuous Drain Current (ID) — 2.3 A
Total Package Power Dissipation (PD) — 2 W
Kemasan / Case — 8-SOIC (SO-8)
Kiraan Pin — 8
Lead-Free / Halogen-Free — Yes / Yes
RoHS Compliance — Compliant
MSL (Moisture Sensitivity Level) — MSL1
Qualification — Industrial
Soldering Compatibility — Vapor Phase, Infrared, Wave
dv/dt Rating — Dynamic (rated per datasheet)

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