IRF9952TRPBF vs IRF7313TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRF9952TRPBF disebabkan oleh Infineon dan IRF7313TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRF9952TRPBF IRF7313TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Configuration Complementary N-Channel + P-Channel, dual MOSFET array —
N-Channel VDS (Drain-Source Voltage) 30 V —
P-Channel VDS (Drain-Source Voltage) -30 V —
N-Channel Continuous Drain Current (ID) 3.5 A —
P-Channel Continuous Drain Current (ID) 2.3 A —
N-Channel R_DS(on) max 0.10 ohm (at VGS = 10 V) —
P-Channel R_DS(on) max 0.25 ohm (at VGS = -10 V) —
Total Package Power Dissipation (PD) 2 W —
Technology IR MOSFET / Fifth Generation HEXFET IR MOSFET Generation V (HEXFET Fifth Generation)
Kemasan 8-pin SOIC (SO-8), surface mount 8-pin SOIC (SO-8) surface mount
Jenis Pemasangan Surface Mount Surface Mount
Gambaran Suhu Operasi -55C to +150C (junction) -55C to +150C (junction)
Status RoHS Compliant (Pb-free, indicated by PBF suffix) —
Tape and Reel Packaging Yes (TRPBF suffix) —
Qualification Consumer market —
Manufacturer — Infineon (formerly International Rectifier)
Part Number — IRF7313TRPBF
Transistor Configuration — Dual N-Channel (Independent)
Drain-Source Voltage (VDS) max — 30 V
Continuous Drain Current (ID) max — 6.5 A per channel
On-Resistance (RDS(on)) max — 29 mOhm at VGS=10V
Power Dissipation (PD) max — 2 W
Gate-Source Voltage (VGS) max — [DATA_NEEDED: ±V rating]
Gate Threshold Voltage (VGS(th)) — 1.0 V to 2.5 V (typical range)
Lead-Free / Pbf — Yes (lead-free plating)
Avalanche Rated — Yes
Aras MSL — 1
Qualification Standard — Consumer market (per IR datasheet)
Shipping Media — Tape & Reel (TRPBF suffix)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga