IRFB4020PBF vs IRLB4132PBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB4020PBF disebabkan oleh Infineon dan IRLB4132PBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFB4020PBF IRLB4132PBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology IR MOSFET (HEXFET) —
Drain-Source Voltage (VDS) 200 V 30 V
Continuous Drain Current (ID) at TC 18 A —
Power Dissipation (PD) at TC 100 W —
RDS(on) Maximum 100 mOhm —
Gate-Source Voltage (VGS) Maximum 20 V —
Thermal Resistance, Junction-to-Case (RthJC) 1.43 C/W —
Suhu Hubungan Operasi 175 C (max) —
Kemasan TO-220AB (through-hole) —
Jenis Pemasangan Through Hole Through Hole
Kiraan Pin 3 (Gate, Drain, Source) —
Lead-Free (PbF suffix) Yes —
Market Qualification Consumer —
Recommended Use Class-D audio amplifier and high-efficiency switching applications —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Jenis Transistor — N-Channel MOSFET (HEXFET)
Continuous Drain Current (ID, Tc=25C) — 78 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Maximum Power Dissipation (PD, Tc=25C) — 140 W
On-Resistance (RDS(on), VGS=10V) — 3.5 mOhm (typical)
On-Resistance (RDS(on), VGS=4.5V) — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Threshold Voltage (VGS(th), typical) — 1.0 V to 2.5 V
Gate Charge (Qg, typical) — [DATA_NEEDED: total gate charge]
Maximum Junction Temperature — 175 C
Gambaran Suhu Operasi — -55 C to +175 C
Kemasan / Case — TO-220AB (through-hole, 3 leads)
Lead-Free / RoHS — Yes (Pb-free PBF suffix)
AEC-Q101 Automotive Qualification — Not qualified (industrial/commercial)

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