IRFB4020PBF vs IRLB4132PBF 比較
詳細並排比較 IRFB4020PBF 由 Infineon 與 IRLB4132PBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRFB4020PBF | IRLB4132PBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| FET Type | N-Channel | — |
| Technology | IR MOSFET (HEXFET) | — |
| Drain-Source Voltage (VDS) | 200 V | 30 V |
| Continuous Drain Current (ID) at TC | 18 A | — |
| Power Dissipation (PD) at TC | 100 W | — |
| RDS(on) Maximum | 100 mOhm | — |
| Gate-Source Voltage (VGS) Maximum | 20 V | — |
| Thermal Resistance, Junction-to-Case (RthJC) | 1.43 C/W | — |
| 工作接面溫度 | 175 C (max) | — |
| 封裝 | TO-220AB (through-hole) | — |
| 安裝類型 | Through Hole | Through Hole |
| 腳位數 | 3 (Gate, Drain, Source) | — |
| Lead-Free (PbF suffix) | Yes | — |
| Market Qualification | Consumer | — |
| Recommended Use | Class-D audio amplifier and high-efficiency switching applications | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| 電晶體類型 | — | N-Channel MOSFET (HEXFET) |
| Continuous Drain Current (ID, Tc=25C) | — | 78 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Maximum Power Dissipation (PD, Tc=25C) | — | 140 W |
| On-Resistance (RDS(on), VGS=10V) | — | 3.5 mOhm (typical) |
| On-Resistance (RDS(on), VGS=4.5V) | — | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th), typical) | — | 1.0 V to 2.5 V |
| Gate Charge (Qg, typical) | — | [DATA_NEEDED: total gate charge] |
| Maximum Junction Temperature | — | 175 C |
| 工作溫度範圍 | — | -55 C to +175 C |
| 封裝 / 外殼 | — | TO-220AB (through-hole, 3 leads) |
| Lead-Free / RoHS | — | Yes (Pb-free PBF suffix) |
| AEC-Q101 Automotive Qualification | — | Not qualified (industrial/commercial) |