IRFB4110PBF vs IRF540ZPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFB4110PBF disebabkan oleh Infineon dan IRF540ZPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFB4110PBF IRF540ZPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 100 V —
Continuous Drain Current (ID) at TC=25°C 120 A (bond-wire limited) —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical/min/max] —
On-Resistance RDS(on) max at VGS=10V 4.5 mΩ —
On-Resistance RDS(on) typ at VGS=10V 3.7 mΩ —
Power Dissipation (PD) at TC=25°C 370 W —
Suhu Hubungan Operasi -55 °C to +175 °C —
Kemasan TO-220AB (through-hole) TO-220AB (through-hole, 3-lead)
Technology HEXFET (planar DMOS) HEXFET Power MOSFET (N-Channel DMOS)
Jenis Pemasangan Through Hole Through Hole
Status RoHS Compliant (Pb-free suffix) Compliant
Lead-Free Yes (PBF suffix denotes Pb-free) Yes
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRF540ZPBF
Drain-Source Voltage (V_DS) — 100 V
Continuous Drain Current (I_D) at T_C=25C — 36 A
Pulsed Drain Current (I_DM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (V_GS) max — [DATA_NEEDED: V_GS maximum rating]
Gate Threshold Voltage (V_GS(th)) — [DATA_NEEDED: V_GS(th) typical]
On-Resistance R_DS(on) max at V_GS=10V — 26.5 mOhm
Total Gate Charge (Q_g) — 42 nC
Power Dissipation (P_D) at T_C=25C — 92 W
Maximum Junction Temperature — 175 C
Gambaran Suhu Hubungan Operasi — -55 C to +175 C
Kiraan Pin — 3 (Gate, Drain, Source)
Automotive Qualified — Yes (per datasheet description)

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