IRFH5020TRPBF vs IRF7416TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFH5020TRPBF disebabkan oleh Infineon dan IRF7416TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFH5020TRPBF IRF7416TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) —
Product Family HEXFET Power MOSFET —
FET Type MOSFET N-Channel, Metal Oxide P-Channel
Configuration Single with built-in diode —
Drain-to-Source Voltage (VDS) 200 V -30 V
Continuous Drain Current (ID) at TA=25°C 5.1 A —
Pulsed Drain Current (IDM) 63 A -50 A
Gate-to-Source Voltage (VGS) max ±20 V [DATA_NEEDED: VGS max rating]
RDS(on) max at VGS=10V 55 mΩ —
Gate Charge (Qg) typ 11 nC —
Power Dissipation (TA=25°C) 3.6 W —
Pembuangan Kuasa (TC=25°C) 8.3 W —
Thermal Resistance, Junction-to-PCB (RthJB) 0.8 °C/W —
Package Type 8-PQFN (5x6 mm) SuperSO8 —
Jenis Pemasangan Surface Mount Surface Mount
Profile Height ≤ 0.9 mm —
Gambaran Suhu Operasi -55 °C to +150 °C (TJ max) —
Qualification Standard JEDEC (Normal level) —
Gate Drive Optimization 10 V VGS —
RoHS Compliance Compliant (Pb-free suffix PBF) —
Aras MSL 1 (per industry standard for PQFN-8) 1 (unlimited)
Technology — HEXFET (IR MOSFET)
Continuous Drain Current (ID) at TA=25C — -10 A
Static Drain-to-Source On-Resistance (RDS(on)) max — 20 mOhm at VGS = -10 V
Gate Threshold Voltage (VGS(th)) — -1 V to -3 V
Total Gate Charge (Qg) — 61 nC
Power Dissipation (PD) max at TA=25C — 2.5 W
Thermal Resistance, Junction-to-Ambient (RthJA) — 50 C/W
Gambaran Suhu Hubungan Operasi — -55 C to +150 C
Kemasan — 8-SO (SOIC-8)
Status RoHS — Compliant
Lead-Free — Yes

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