IRFP250NPBF vs IRFP250MPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFP250NPBF disebabkan oleh Infineon dan IRFP250MPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFP250NPBF IRFP250MPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Harga Unit (USD) — $2.55
Technology N-Channel HEXFET Power MOSFET (Fifth Generation) HEXFET (IR MOSFET)
Drain-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TC 30 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Power Dissipation (PD) at TC 214 W —
On-Resistance RDS(on) [DATA_NEEDED: typical RDS(on) at VGS=10V] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) typical/range] —
Kemasan TO-247AC (through-hole) —
Jenis Pemasangan Through Hole Through Hole
Gambaran Suhu Operasi -55 C to +175 C (TJ) —
Avalanche Energy Rating Fully avalanche rated —
dv/dt Rating Dynamic dv/dt rated —
Switching Frequency Optimization Optimized for applications below 100 kHz —
Qualification Standard JEDEC —
Lead-Free Status Yes (PBF suffix) —
Status RoHS Compliant Compliant
Planar Cell Structure Yes (wide SOA) —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Part Number — IRFP250MPBF
Jenis Transistor — N-Channel MOSFET
Drain-Source Voltage (Vds) — 200 V
Continuous Drain Current (Id) at Tc=25C — 30 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current value]
Static Drain-Source On-Resistance (RDS(on)) — 75 mOhm max @ Vgs=10V
Gate-Source Threshold Voltage (Vgs(th)) — 4 V (typ)
Total Gate Charge (Qg) — 82 nC
Power Dissipation (Pd) at Tc=25C — 214 W
Suhu Hubungan Operasi — -55C to +175C
Kemasan / Case — TO-247AC (3-pin + tab)
Bilangan Pin — 3
Avalanche Rated — Yes
Lead-Free — Yes
Aras MSL — 1 (unlimited)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga