IRFP2907PBF vs IRFP260MPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFP2907PBF disebabkan oleh Infineon dan IRFP260MPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFP2907PBF IRFP260MPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies (formerly International Rectifier) Infineon Technologies
Part Number IRFP2907PBF —
Technology HEXFET Stripe Planar DMOS (N-Channel) MOSFET (Metal Oxide Semiconductor)
Drain-to-Source Voltage (V_DSS) 75 V —
Continuous Drain Current (I_D) at T_C = 25 C 209 A —
Static Drain-to-Source On-Resistance (R_DS(on)) 4.5 mOhm at V_GS = 10 V —
Power Dissipation (P_D) at T_C = 25 C 470 W —
Total Gate Charge (Q_g) 410 nC —
Maximum Junction Operating Temperature +175 C —
Package / Mounting Type TO-247AC (Through Hole) —
Kiraan Pin 3 (Gate, Drain, Source) —
RoHS Compliance Yes (Pb-free) —
Avalanche Rated Yes (repetitive avalanche rated) Yes
Body Diode Integral (no external anti-parallel diode required) —
Lead-Free Yes Yes
Part Status — Active
FET Type — N-Channel
Drain-Source Voltage (VDS) — 200 V
Continuous Drain Current (ID) at Tc=25C — 50 A
Continuous Drain Current (ID) at Tc=100C — [DATA_NEEDED: ID at Tc=100C]
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM]
Power Dissipation (PD) at Tc=25C — 300 W
On-Resistance RDS(on) max — 40 mOhm
Gate Threshold Voltage VGS(th) typ — [DATA_NEEDED: VGS(th)]
Input Capacitance Ciss — 1560 pF
Total Gate Charge Qg — [DATA_NEEDED: Qg]
Gambaran Suhu Operasi — -55C to +175C
Kemasan / Case — TO-247AC (3-lead through-hole)
Jenis Pemasangan — Through Hole
Status RoHS — Compliant
Aras MSL — Not Applicable (through-hole)

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