IRFR220NTRPBF vs IRFR3411TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR220NTRPBF disebabkan oleh Infineon dan IRFR3411TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR220NTRPBF IRFR3411TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET MOSFET (Metal Oxide)
Technology HEXFET (IR MOSFET) HEXFET Power MOSFET (IR)
Drain-to-Source Voltage (VDS) 200 V —
Continuous Drain Current (ID) at TC=25°C 5 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
On-Resistance Rds(on) max at VGS=10V 600 milliohm —
Total Gate Charge (Qg) 15 nC (typical per Mouser listing) —
Maximum Power Dissition (PD) at TC=25°C 43 W —
Suhu Hubungan Operasi -55°C to +150°C —
Kemasan TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (unlimited floor life per JEDEC J-STD-020) —
Status RoHS Compliant (PBF suffix) —
Avalanche Energy Rated Yes (fully characterized) —
Lead-Free Yes (PBF suffix indicates Pb-free plating) —
Polarity — N-Channel
V(BR)DSS (Drain-Source Breakdown Voltage) — 100 V
RDS(on) max @ VGS=10V — 44 mOhm
Continuous Drain Current (Id) @ Tc — 32 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Power Dissipation (Pd) @ Tc — 130 W
Gate Charge (Qg) — 48 nC
Operating Mode — Enhancement
Maximum Junction Temperature — 175 C
Gambaran Suhu Operasi — -55 C to +175 C
Bilangan Pin — 3
Avalanche Rated — Yes (fully avalanche rated)
dv/dt Rating — Dynamic dv/dt rated
Lead-Free / RoHS — Yes (Lead-free, PBF suffix)

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