IRFR2405TRLPBF vs IRFZ48NSTRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR2405TRLPBF disebabkan oleh Infineon dan IRFZ48NSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR2405TRLPBF | IRFZ48NSTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Technology | HEXFET (IR MOSFET, 7th generation) | — |
| Drain-Source Voltage (VDS) | 55 V | — |
| Continuous Drain Current (ID) at Tc | 56 A | — |
| Pulsed Drain Current (IDM) | 200 A (typical, per datasheet family) | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | 16 mOhm | — |
| Gate Charge (Qg) typical | 70 nC | — |
| Power Dissipation (PD) at Tc | 110 W | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gambaran Suhu Operasi | -55 C to +175 C (junction) | — |
| Kemasan | TO-252AA (DPAK), 3-pin (2 + Tab) | D2PAK (TO-263) Surface Mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Avalanche Energy Rated | Yes (HEXFET ruggedized design) | — |
| Lead-Free / RoHS | Yes, PBF suffix indicates lead-free and RoHS compliant | — |
| Packaging | Tape & Reel (TR) | Tape & Reel (13-inch reel, TRL) |
| FET Type | — | N-Channel Power MOSFET |
| Drain-to-Source Voltage (VDS) | — | 55 V |
| Continuous Drain Current (ID) @ Tc=25C | — | 64 A |
| Static Drain-to-Source On-Resistance (Rds(on)) | — | 14 mΩ at VGS = 10 V |
| Gate-to-Source Threshold Voltage (VGS(th)) | — | 2.0 V to 4.0 V |
| Total Gate Charge (Qg) | — | 54 nC |
| Gate-to-Source Voltage (VGS) max | — | ±20 V |
| Power Dissipation (Pd) @ Tc=25C | — | 130 W |
| Power Dissipation (Pd) @ Ta=25C on FR-4 | — | 3.8 W |
| Suhu Hubungan Operasi | — | -55C to +175C |
| Lead Finish | — | Lead-free (PBF) matte tin |
| Status RoHS | — | Compliant |
| Technology Family | — | HEXFET advanced process technology |