IRFR3806TRPBF vs IRFR220NTRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR3806TRPBF disebabkan oleh Infineon dan IRFR220NTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IRFR220NTRLPBF IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF - 200V 5A N-Ch MOSFET, DPAK | Infineon

IRFR220NTRLPBF ✓ Aktif

Pengandingan Spesifikasi

Parametr IRFR3806TRPBF IRFR220NTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Transistor Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (VDS) 60 V —
Continuous Drain Current (ID) at Tc 43 A —
On-State Resistance RDS(on) max 15.8 mOhm at VGS = 10 V —
Total Gate Charge (Qg) 22 nC [DATA_NEEDED: total gate charge Qg]
Power Dissipation (Pd) at Tc = 25 C 71 W —
Kemasan / Case TO-252AA (DPAK) —
Jenis Pemasangan Surface Mount Surface Mount
Technology HEXFET (IR MOSFET) —
Gambaran Suhu Operasi -55 C to +175 C -55C to +150C (junction)
Gate-Source Voltage (VGS) max +/- 20 V —
Number of Units in IC 1 —
Lead-Free / RoHS Yes (PBF suffix, lead-free) —
Avalanche Rated Yes (HEXFET family) Yes (HEXFET ruggedized design)
Polarity — N-Channel
Mode — Enhancement
V(BR)DSS (Drain-Source Breakdown Voltage) — 200 V
Continuous Drain Current (Id) at Tc=25C — 5 A
Pulsed Drain Current (Idm) — [DATA_NEEDED: pulsed drain current]
Static Drain-Source On-Resistance (RDS(on)) — 0.800 ohm (max)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
Gate-to-Drain Charge (Qgd) — Low (per datasheet - HEXFET design)
Power Dissipation (Pd) at Tc=25C — 43 W
Kemasan — TO-252AA (DPAK), 2 Leads + Tab, SC-63
Aras MSL — 1
Status RoHS — Compliant (Pb-free PBF suffix)
Packaging — Tape & Reel (Left orientation - TRLPBF)
Technology Family — HEXFET, Planar, Generation 3

Laporan Datasheet & Sumber

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