IRFR4615TRLPBF vs IRFR3411TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR4615TRLPBF disebabkan oleh Infineon dan IRFR3411TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR4615TRLPBF | IRFR3411TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Technology | IR MOSFET (N-Channel Enhancement Mode) | HEXFET Power MOSFET (IR) |
| Drain-Source Voltage (VDS) | 150 V | — |
| Continuous Drain Current (ID) at TC=25C | 33 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| On-Resistance RDS(on) max at VGS=10V | 42 mOhm | — |
| Total Gate Charge (Qg) | 26 nC | — |
| Gate-Source Charge (Qgs) | [DATA_NEEDED: Qgs] | — |
| Gate-Drain Charge (Qgd) | [DATA_NEEDED: Qgd] | — |
| Power Dissipation (PD) at TC=25C | 144 W | — |
| Avalanche Energy (EAS) | 109 mJ | — |
| Gambaran Suhu Operasi | -55C to +175C | -55 C to +175 C |
| Kemasan | TO-252AA (DPAK) | TO-252AA (DPAK) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Lead-Free / RoHS | Yes (PBF suffix indicates Pb-free) | Yes (Lead-free, PBF suffix) |
| Tenaga Gesa tunggal padek | 109 mJ | — |
| Polarity | — | N-Channel |
| FET Type | — | MOSFET (Metal Oxide) |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 100 V |
| RDS(on) max @ VGS=10V | — | 44 mOhm |
| Continuous Drain Current (Id) @ Tc | — | 32 A |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed drain current] |
| Power Dissipation (Pd) @ Tc | — | 130 W |
| Gate Charge (Qg) | — | 48 nC |
| Operating Mode | — | Enhancement |
| Maximum Junction Temperature | — | 175 C |
| Bilangan Pin | — | 3 |
| Avalanche Rated | — | Yes (fully avalanche rated) |
| dv/dt Rating | — | Dynamic dv/dt rated |