IRFR5305TRLPBF vs IRFR9120NTRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR5305TRLPBF disebabkan oleh Infineon dan IRFR9120NTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR5305TRLPBF IRFR9120NTRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -55 V -100 V
Continuous Drain Current (ID) at Tc=25C -31 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=-10V 65 mΩ —
RDS(on) max at VGS=-5V [DATA_NEEDED: RDS(on) at VGS=-5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] -2 V to -4 V
Power Dissipation (PD) at Tc=25C 110 W —
Suhu Hubungan Operasi -55C to +175C —
Kemasan TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Technology HEXFET fifth-generation planar MOSFET IR MOSFET (planar)
Avalanche Rated Yes (fully avalanche rated) —
Lead-Free / RoHS Yes (Pb-free, suffix "PBF") —
Tape & Reel Orientation Left orientation (TRLPBF = Tape & Reel, Left) —
Transistor Polarity — P-Channel
Continuous Drain Current (ID) — -6.6 A (Tc)
Gate-Source Voltage (VGS) — ±20 V
On-Resistance (RDS(on)) — 480 mOhm max @ VGS = -10 V
Gate Charge (Qg) — 18 nC (typ)
Power Dissipation (PD) — 40 W (Tc)
Gambaran Suhu Operasi — -55C to +150C (Tj)
Kiraan Pin — 3 (Gate, Drain, Source)
Aras MSL — 1
Status RoHS — Compliant (Pb-free)
Lead-Free — Yes

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