IRFR5305TRLPBF vs IRFR9120NTRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR5305TRLPBF sa pamamagitan ng Infineon at IRFR9120NTRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFR5305TRLPBF IRFR9120NTRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity / Channel Type P-Channel —
Drain-Source Voltage (VDS) -55 V -100 V
Continuous Drain Current (ID) at Tc=25C -31 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=-10V 65 mΩ —
RDS(on) max at VGS=-5V [DATA_NEEDED: RDS(on) at VGS=-5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) range] -2 V to -4 V
Power Dissipation (PD) at Tc=25C 110 W —
Temperature ng Junction na Operasyon -55C to +175C —
Packhaging TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology HEXFET fifth-generation planar MOSFET IR MOSFET (planar)
Avalanche Rated Yes (fully avalanche rated) —
Lead-Free / RoHS Yes (Pb-free, suffix "PBF") —
Tape & Reel Orientation Left orientation (TRLPBF = Tape & Reel, Left) —
Transistor Polarity — P-Channel
Continuous Drain Current (ID) — -6.6 A (Tc)
Gate-Source Voltage (VGS) — ±20 V
On-Resistance (RDS(on)) — 480 mOhm max @ VGS = -10 V
Gate Charge (Qg) — 18 nC (typ)
Power Dissipation (PD) — 40 W (Tc)
Hanay ng Temperature na Operasyon — -55C to +150C (Tj)
Bilang ng Pin — 3 (Gate, Drain, Source)
Level ng MSL — 1
Tindminan RoHS — Compliant (Pb-free)
Lead-Free — Yes

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