IRFR5305TRPBF vs IRF4905STRRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR5305TRPBF disebabkan oleh Infineon dan IRF4905STRRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR5305TRPBF | IRF4905STRRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) Max | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | 31 A | -74 A |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance (RDS(on)) Max at VGS=-10V | 65 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | -2 V to -4 V | — |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg typ] | — |
| Power Dissipation (PD) at TC=25C | 110 W | 170 W |
| Single-Pulse Avalanche Energy (EAS) | 270 mJ | — |
| Gambaran Suhu Operasi | -55 C to +175 C | — |
| Kemasan | TO-252AA (DPAK) | D2PAK (TO-263-3) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | HEXFET (Advanced Process) |
| Aras MSL | 1 | — |
| Status RoHS | Compliant (Pb-free PBF suffix) | Compliant |
| Lead-Free Finish | Yes (PBF suffix) | — |
| Drain-Source Voltage (VDS) | — | -55 V |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=-10V | — | 20 mOhm |
| RDS(on) max at VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | -2.0 V to -4.0 V |
| Total Gate Charge (Qg) | — | 120 nC |
| Suhu Hubungan Operasi | — | -55 C to +175 C |
| Lead-Free | — | Yes |