IRFR5305TRPBF vs IRF4905STRRPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRFR5305TRPBF sa pamamagitan ng Infineon at IRF4905STRRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | IRFR5305TRPBF | IRF4905STRRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) Max | -55 V | — |
| Continuous Drain Current (ID) at TC=25C | 31 A | -74 A |
| Continuous Drain Current (ID) at TC=100C | [DATA_NEEDED: ID at TC=100C] | [DATA_NEEDED: ID at TC=100C] |
| On-Resistance (RDS(on)) Max at VGS=-10V | 65 mOhm | — |
| Gate-Source Threshold Voltage (VGS(th)) | -2 V to -4 V | — |
| Gate Charge (Qg) Typ | [DATA_NEEDED: Qg typ] | — |
| Power Dissipation (PD) at TC=25C | 110 W | 170 W |
| Single-Pulse Avalanche Energy (EAS) | 270 mJ | — |
| Hanay ng Temperature na Operasyon | -55 C to +175 C | — |
| Packhaging | TO-252AA (DPAK) | D2PAK (TO-263-3) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | HEXFET (IR MOSFET) | HEXFET (Advanced Process) |
| Level ng MSL | 1 | — |
| Tindminan RoHS | Compliant (Pb-free PBF suffix) | Compliant |
| Lead-Free Finish | Yes (PBF suffix) | — |
| Drain-Source Voltage (VDS) | — | -55 V |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| RDS(on) max at VGS=-10V | — | 20 mOhm |
| RDS(on) max at VGS=-4.5V | — | [DATA_NEEDED: RDS(on) at VGS=-4.5V] |
| Gate Threshold Voltage (VGS(th)) | — | -2.0 V to -4.0 V |
| Total Gate Charge (Qg) | — | 120 nC |
| Temperature ng Junction na Operasyon | — | -55 C to +175 C |
| Lead-Free | — | Yes |