IRFR9120NTRPBF vs IRFR2405TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR9120NTRPBF disebabkan oleh Infineon dan IRFR2405TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR9120NTRPBF IRFR2405TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity P-Channel —
Drain-Source Voltage (VDS) -100 V 55 V
Continuous Drain Current (ID) at TC=25C -6.6 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] [DATA_NEEDED: pulsed drain current]
On-Resistance (RDS(on)) max at VGS=-10V 480 milliohm —
Gate-Source Voltage (VGS) max +/-20 V [DATA_NEEDED: VGS max rating]
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) 18 nC (typical) 70 nC
Continuous Power Dissipation (PD) at TC=25C 40 W —
Gambaran Suhu Hubungan Operasi -55C to +175C —
Thermal Resistance Junction-to-Case (RthJC) [DATA_NEEDED: RthJC] —
Kemasan TO-252AA (DPAK), surface mount TO-252AA (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (unlimited floor life) 1
Lead Finish / Plating Pb-free (PBF suffix), Matte Tin —
Technology HEXFET fifth-generation IR MOSFET HEXFET (IR MOSFET)
Status RoHS Compliant Compliant (Lead-Free PBF suffix)
Moisture Sensitivity MSL1 per JEDEC J-STD-020 —
Manufacturer — Infineon Technologies
Part Status — Active
FET Type — N-Channel
Continuous Drain Current (ID) at Tc=25C — 56 A
On-Resistance RDS(on) max at VGS=10V — 16 mOhm
On-Resistance RDS(on) max at VGS=5V — [DATA_NEEDED: RDS(on) at 5V]
Power Dissipation (PD) at Tc=25C — 110 W
Suhu Hubungan Operasi — -55C to +175C
Kiraan Pin — 3 (Gate, Drain, Source) + Tab
Boson Bebas — [DATA_NEEDED: halogen-free status]
Avalanche Rated — Yes (100% avalanche tested)

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