IRLB4030PBF vs IRLR120NTRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLB4030PBF disebabkan oleh Infineon dan IRLR120NTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLB4030PBF | IRLR120NTRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Transistor | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 180 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) max at VGS=10V | 4.3 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 87 nC | 13.3 nC |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V] | — |
| Power Dissipation (PD) at Tc | 370 W | — |
| Gambaran Suhu Operasi | -55C to +175C | -55C to +175C (junction) |
| Kemasan | TO-220AB | TO-252AA (DPAK), 3-pin surface mount |
| Jenis Pemasangan | Through Hole | Surface Mount |
| Technology | HEXFET (StrongIRFET family) | HEXFET (Fifth Generation, planar) |
| Logic Level Drive | Yes (optimized for 4.5 V to 10 V VGS) | — |
| Qualification | JEDEC | — |
| Status RoHS | Compliant | — |
| FET Type | — | N-Channel MOSFET |
| Drain-to-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 10 A |
| Continuous Drain Current (Id) at Tc=100C | — | [DATA_NEEDED: Id at Tc=100C] |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed Idm] |
| Rds(on) Max at Vgs=10V | — | 185 mΩ |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: typical Vgs(th)] |
| Power Dissipation (Pd) at Tc=25C | — | 48 W |
| Avalanche Energy Rating | — | Fully avalanche rated |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates lead-free) |
| Aras MSL | — | 1 |