IRLB4030PBF vs IRLR120NTRPBF 比較
詳細並排比較 IRLB4030PBF 由 Infineon 與 IRLR120NTRPBF 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | IRLB4030PBF | IRLR120NTRPBF |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 類別 | MOSFETs | MOSFETs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 電晶體類型 | N-Channel MOSFET | — |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (ID) at Tc | 180 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| On-Resistance RDS(on) max at VGS=10V | 4.3 mOhm | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | 87 nC | 13.3 nC |
| Gate-to-Source Voltage (VGS) max | [DATA_NEEDED: VGS absolute maximum, typical +/- 20 V] | — |
| Power Dissipation (PD) at Tc | 370 W | — |
| 工作溫度範圍 | -55C to +175C | -55C to +175C (junction) |
| 封裝 | TO-220AB | TO-252AA (DPAK), 3-pin surface mount |
| 安裝類型 | Through Hole | Surface Mount |
| Technology | HEXFET (StrongIRFET family) | HEXFET (Fifth Generation, planar) |
| Logic Level Drive | Yes (optimized for 4.5 V to 10 V VGS) | — |
| Qualification | JEDEC | — |
| RoHS 狀態 | Compliant | — |
| FET Type | — | N-Channel MOSFET |
| Drain-to-Source Voltage (Vdss) | — | 100 V |
| Continuous Drain Current (Id) at Tc=25C | — | 10 A |
| Continuous Drain Current (Id) at Tc=100C | — | [DATA_NEEDED: Id at Tc=100C] |
| Pulsed Drain Current (Idm) | — | [DATA_NEEDED: pulsed Idm] |
| Rds(on) Max at Vgs=10V | — | 185 mΩ |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: typical Vgs(th)] |
| Power Dissipation (Pd) at Tc=25C | — | 48 W |
| Avalanche Energy Rating | — | Fully avalanche rated |
| Lead-Free / RoHS | — | Yes (PBF suffix indicates lead-free) |
| MSL 等級 | — | 1 |