IRLML0030TRPBF vs IRLL024NTRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLML0030TRPBF disebabkan oleh Infineon dan IRLL024NTRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLML0030TRPBF | IRLL024NTRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | MOSFET, Metal Oxide |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID) at TA=25C | 5.3 A | — |
| Drain-Source On-Resistance (RDS(on)) max | 27 mOhm at VGS=4.5V | — |
| Gate-Source Threshold Voltage (VGS(th)) | Logic-level (5 V optimized) | — |
| Total Gate Charge (Qg) | 3.6 nC typical | 10.4 nC |
| Power Dissipation (PD) at TA=25C | 1.3 W | — |
| Gambaran Suhu Operasi | -55C to +150C | — |
| Kemasan | Micro3 / SOT-23 (3-pin) | SOT-223 (4-pin) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | IR HEXFET Power MOSFET | HEXFET Power MOSFET |
| Aras MSL | 1 (unlimited floor life per JEDEC J-STD-020) | — |
| Soldering | Wave-solder capable | — |
| Qualification | JEDEC standard | — |
| Status RoHS | Compliant | Compliant |
| Polarity | — | N-Channel |
| Operating Mode | — | Enhancement Mode |
| V(BR)DSS (Drain-Source Breakdown Voltage) | — | 55 V |
| Continuous Drain Current (ID) at Ta | — | 3.1 A |
| Pulsed Drain Current (IDM) | — | 4.4 A |
| Static Drain-Source On-Resistance (RDS(on)) | — | 0.065 ohm |
| Gate Threshold Voltage (VGS(th)) | — | Logic Level (5 V drive capable) |
| Maximum Power Dissipation (Pd) at Ta | — | 1.0 W |
| Maximum Operating Junction Temperature | — | 175 C |