IRLML2030TRPBF vs IRLML6246TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLML2030TRPBF disebabkan oleh Infineon dan IRLML6246TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLML2030TRPBF IRLML6246TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies (formerly International Rectifier)
Part Number IRLML2030TRPBF IRLML6246TRPBF
FET Type N-Channel N-Channel
Technology HEXFET (IR MOSFET) IR MOSFET (HEXFET Power MOSFET)
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID) at Ta 2.7 A —
Power Dissipation (PD) at Ta 1.3 W —
On-Resistance RDS(on) max @ VGS=10V 100 mOhm —
On-Resistance RDS(on) max @ VGS=4.5V 154 mOhm 46 mOhm
Gate-Source Voltage (VGS) max +/-20 V —
Gate Charge (Qg) typ 1.0 nC —
Kemasan Micro3 (SOT-23) SOT-23 (Micro3)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55C to +150C (junction) —
Aras MSL MSL 1 MSL1 (per JEDEC J-STD-020)
RoHS Compliance Yes (lead-free, halogen-free) Yes (Pb-free)
Qualification JEDEC standard —
Soldering Wave-solder compatible —
Drain-to-Source Voltage (VDS) — 20 V
Continuous Drain Current (ID) at Ta=25C — 4.1 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: IDM pulsed value]
On-Resistance RDS(on) max @ VGS=2.5V — [DATA_NEEDED: RDS(on) at 2.5V]
Gate Threshold Voltage VGS(th) typ — 1.1 V (logic-level)
Gate Charge Qg typ — [DATA_NEEDED: Qg total gate charge]
Power Dissipation (Ta=25C) — 1.3 W
Gambaran Suhu Operasi — -55C to +150C (junction)
Boson Bebas — Yes

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