IRLML6346TRPBF vs IRLML2803TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLML6346TRPBF disebabkan oleh Infineon dan IRLML2803TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLML6346TRPBF IRLML2803TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
Drain-Source Voltage (VDS) 30 V 30 V
Continuous Drain Current (ID) 3.4 A (TA=25C) —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
RDS(on) max @ VGS=2.5V 63 mOhm —
RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) at VGS=4.5V] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) value] —
Gate Drive Capability 2.5V logic-level —
Maximum Power Dissipation (PD) 1.3 W (TA=25C, 1in2 FR4) —
Suhu Hubungan Operasi -55C to +150C —
Kemasan Micro3 / SOT-23 Micro3 / SOT-23 (3-pin)
Jenis Pemasangan Surface Mount Surface Mount
Technology HEXFET Power MOSFET IR MOSFET Generation V
Aras MSL 1 1
Lead-Free Finish Yes (PBF suffix) —
Status RoHS Compliant —
Manufacturer — Infineon Technologies
Part Number — IRLML2803TRPBF
Jenis Transistor — N-Channel MOSFET
Continuous Drain Current (ID) at TA=25C — 1.2 A
On-Resistance RDS(on) at VGS=4.5V — 250 mOhm maximum
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: typical VGS(th)]
Gate Charge (Qg) — 3.3 nC typical
Power Dissipation (PD) at TA=25C — 540 mW
Gambaran Suhu Operasi — -55C to +150C (TJ)
Gate Drive Level — Logic-level (driven from 3.3V / 5V)
RoHS Compliance — Compliant, Halogen-Free

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