IRLR2705TRLPBF vs IRLR2705TRPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR2705TRLPBF disebabkan oleh Infineon dan IRLR2705TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLR2705TRLPBF IRLR2705TRPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Jenis Transistor N-Channel MOSFET (HexFET) —
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC=25C 28 A —
Static Drain-Source On-Resistance (RDS(on)) max at VGS=10V 40 mOhm —
Gate-Source Threshold Voltage (VGS(th)) 1.0 V to 2.0 V (logic-level) —
Gate-Source Voltage (VGS) max 20 V —
Power Dissipation (PD) at TC=25C 68 W —
Gambaran Suhu Operasi -55C to +175C —
Kemasan TO-252AA (DPAK) TO-252AA (DPAK)
Jenis Pemasangan Surface Mount Surface Mount
Avalanche Rated Yes (fully avalanche rated) Yes
Lead-Free / RoHS Status Lead-Free, RoHS Compliant —
Technology IR MOSFET (HEXFET, 5th generation) HEXFET (IR MOSFET generation 5)
Configuration Single N-Channel —
Aras MSL 1 (unlimited floor life at <30C / 85% RH) [DATA_NEEDED: MSL rating per JEDEC J-STD-020]
FET Type — N-Channel MOSFET, Metal Oxide
Drain-to-Source Voltage (VDS) — 55 V
Continuous Drain Current (ID) at Tc=25C — 28 A
Continuous Drain Current (ID) at TA=25C — [DATA_NEEDED: ID at TA=25C with 1in2 copper]
RDS(on) Max at VGS=10V — 40 mOhm
RDS(on) Max at VGS=5V — [DATA_NEEDED: RDS(on) at VGS=5V]
Gate-to-Source Voltage (VGS) Max — [DATA_NEEDED: VGS absolute max, +/-V]
Gate Threshold Voltage (VGS(th)) — Logic-Level (compatible with 4V drive)
Total Gate Charge (Qg) — 16.7 nC
Power Dissipation (PD) at Tc=25C — 68 W
Power Dissipation (PD) at TA=25C — [DATA_NEEDED: PD at TA=25C with 1in2 copper]
Suhu Hubungan Operasi — -55C to +175C
Lead-Free / RoHS — Yes (Pb-free, RoHS compliant)

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