IRLR3410TRPBF vs IRLR3410TRRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLR3410TRPBF disebabkan oleh Infineon dan IRLR3410TRRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLR3410TRPBF | IRLR3410TRRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | N-Channel |
| Technology | HEXFET (IR MOSFET, 5th generation) | IR HEXFET (IR MOSFET process) |
| Drain-Source Voltage (Vdss) | 100 V | — |
| Continuous Drain Current (Id) at Tc=25C | 17 A | — |
| Power Dissipation (Pd) at Tc=25C | 79 W | — |
| On-Resistance RDS(on) max | 105 mOhm | — |
| Gate Threshold Voltage Vgs(th) | Logic-level (drive ~4.5V) | — |
| Total Gate Charge (Qg) | 22.7 nC | 22.7 nC |
| Kemasan | TO-252AA (DPAK), surface mount | TO-252AA (DPAK), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Gambaran Suhu Operasi | -55C to +175C (junction) | -55C to +175C (junction) |
| Lead-Free / RoHS | Yes (PBF suffix) | — |
| Aras MSL | 1 (unlimited floor life at <30C/85% RH) | 1 (per JEDEC J-STD-020) |
| Drain Tab Connection | Tab electrically tied to Drain | — |
| Polarity | N-Channel enhancement mode | — |
| Drain-Source Voltage (VDS) | — | 100 V |
| Continuous Drain Current (ID, Tc=25C) | — | 17 A |
| Power Dissipation (PD, Tc=25C) | — | 79 W |
| On-Resistance (RDS(on) max at VGS=10V) | — | 105 mOhm |
| Gate-Source Threshold Voltage (VGS(th) typ) | — | 1 V (at 250 uA) |
| Packaging Style | — | Tape & Reel Right (TRR) |
| Avalanche Rated | — | Yes |
| Lead-Free / RoHS Status | — | Lead-free, RoHS compliant (PBF suffix) |