IRLZ34NPBF vs IRLZ34NSTRLPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLZ34NPBF disebabkan oleh Infineon dan IRLZ34NSTRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRLZ34NPBF | IRLZ34NSTRLPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon (formerly International Rectifier) | — |
| Part Number Suffix | PBF = Lead-free (Pb-free), Tube packaging | — |
| Jenis Transistor | N-Channel HEXFET Power MOSFET | — |
| Drain-to-Source Voltage (VDS) | 55 V | 55 V |
| Continuous Drain Current (ID) at Tc=25 C | 30 A | — |
| Continuous Drain Current (ID) at Tc=100 C | [DATA_NEEDED: ID at Tc=100 C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | 110 A |
| On-Resistance Rds(on) max @ VGS=10 V | 35 mOhm | — |
| On-Resistance Rds(on) max @ VGS=5 V | [DATA_NEEDED: Rds(on) at VGS=5 V] | — |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (logic-level) | — |
| Total Gate Charge (Qg) | 16.7 nC (typical) | 16.7 nC |
| Power Dissipation (PD) at Tc=25 C | 68 W | — |
| Suhu Hubungan Operasi | -55 C to +175 C | — |
| Kemasan | TO-220AB (through-hole, 3 leads + tab) | D2PAK (TO-263), surface mount |
| Jenis Pemasangan | Through Hole | Surface Mount |
| Status RoHS | Compliant (Pb-free PBF suffix) | Compliant (Pb-free) |
| Aras MSL | Not applicable (through-hole) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at TC | — | 30 A |
| RDS(on) at VGS=5V | — | 35 mOhm (typical) |
| Gate Threshold Voltage (VGS(th)) | — | Logic-level (5 V drive compatible) |
| Power Dissipation (Ta) | — | 3.8 W |
| Power Dissipation (Tc) | — | 68 W |
| Gambaran Suhu Operasi | — | [DATA_NEEDED: operating temperature range] |
| Built-in Body Diode | — | Yes |
| Configuration | — | Single with built-in diode |
| Switching Frequency Optimization | — | Below 100 kHz |
| Cell Structure | — | HEXFET planar (5th generation) |
| Qualification | — | JEDEC standard |